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Thin films of Zr1-xSnxTiO4 (ZTS) were prepared by polymeric precursor route. The influence of process parameters and dopants (Nb, Sb and Ta) on the chemical composition of the films was investigated by means of XPS technique. Surface segregation of Sn-IV and the presence of Sn-0, Ti-II, and Ti-III species in the films were revealed from XPS depth profiles.

Thin films of Zr1-xSnxTiO4 for application in microelectronics

Kaciulis S;
2000

Abstract

Thin films of Zr1-xSnxTiO4 (ZTS) were prepared by polymeric precursor route. The influence of process parameters and dopants (Nb, Sb and Ta) on the chemical composition of the films was investigated by means of XPS technique. Surface segregation of Sn-IV and the presence of Sn-0, Ti-II, and Ti-III species in the films were revealed from XPS depth profiles.
2000
Istituto per lo Studio dei Materiali Nanostrutturati - ISMN
Inglese
Broekman L.D., Usher B.F., Riley J.D.
COMMAD 2000 PROCEEDINGS
COMMAD 2000
379
382
0-7803-6698-0
IEEE, Institute of electrical and electronics engineers
New York
STATI UNITI D'AMERICA
Sì, ma tipo non specificato
December 2000
Melbourne, Australia
6
none
Gusmano, G; Bianco, A; Viticoli, M; Kaciulis, S; Mattogno, G; Pandolfi, L
273
info:eu-repo/semantics/conferenceObject
04 Contributo in convegno::04.01 Contributo in Atti di convegno
04.01 Contributo in Atti di convegno
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/215785
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