The structural, optical and electronic properties of silicon nanocrystals are investigated as a function of the dimension as well as the surface passivation. Both the ground- and an excited-state configuration are studied using ab-initio calculations. Atom relaxation under excitation is taken into account and related with the experimentally observed Stokes shift.

Ab-initio calculations of the electronic properties of silicon nanocrystals: Absorption, emission, stokes shift

Cantele G;
2005

Abstract

The structural, optical and electronic properties of silicon nanocrystals are investigated as a function of the dimension as well as the surface passivation. Both the ground- and an excited-state configuration are studied using ab-initio calculations. Atom relaxation under excitation is taken into account and related with the experimentally observed Stokes shift.
2005
Istituto Superconduttori, materiali innovativi e dispositivi - SPIN
Inglese
PHYSICS OF SEMICONDUCTORS, PTS A AND B
27th International Conference on the Physics of Semiconductors (ICPS-27)
772
859
860
0-7354-0257-4
Sì, ma tipo non specificato
JUL 26-30, 2004
, Flagstaff, AZ, USA
27th International Conference on the Physics of Semiconductors (ICPS-27), Flagstaff, AZ, JUL 26-30, 2004
13
none
Degoli, E; Cantele, G; Luppi, E; Magri, R; Ossicini, S; Ninno, D; Bisi, O; Onida, G; Gatti, M; Incze, A; Pulci, O; Del, Sole; R,
273
info:eu-repo/semantics/conferenceObject
04 Contributo in convegno::04.01 Contributo in Atti di convegno
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/215972
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