We present a temperature dependent line shape analysis of Ga 3d and As 3d core level photoemission data from clean GaAs(110) semiconductor surfaces. This study indicates the presence on the surface of regions with different barrier height. The existence of such barrier height inhomogeneity results in an extra broadening due to an averaging over differently pinned regions. This effect need to be taken into account in order to correctly analyze semiconductors core level line shapes.
Effects of barrier height inhomogeneity on semiconductors core level photoemission line shape
M Pedio
1995
Abstract
We present a temperature dependent line shape analysis of Ga 3d and As 3d core level photoemission data from clean GaAs(110) semiconductor surfaces. This study indicates the presence on the surface of regions with different barrier height. The existence of such barrier height inhomogeneity results in an extra broadening due to an averaging over differently pinned regions. This effect need to be taken into account in order to correctly analyze semiconductors core level line shapes.File in questo prodotto:
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