In this paper the realization and the characterization of a new kind of resonant cavity enhanced photodetector (RCE), fully compatible with silicon microelectronic technologies and working at 1.55 ?m, are reported. © 2010 Springer Science+Business Media B.V.
Fabrication and characterization of a silicon photodetector at 1.55 micron
Casalino;
2010
Abstract
In this paper the realization and the characterization of a new kind of resonant cavity enhanced photodetector (RCE), fully compatible with silicon microelectronic technologies and working at 1.55 ?m, are reported. © 2010 Springer Science+Business Media B.V.File in questo prodotto:
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