Capacitance DLTS measurements have been performed in VPE. GaAs MESFETs prepared on Bridgman Cr-doped and LEC undoped semiinsulating substrates. A band of electron traps was detected near the metal (gate)-semiconductor interface. Near pinch-off conditions, a positive capacitance signal was found to dominate the DLTS spectra in samples prepared on Cr-doped substrates. The feature of this positive capacitance transient have been analyzed and discussed.
A DLTS Investigation of VPE GaAs MESFETs
E Gombia;R Mosca;
1987
Abstract
Capacitance DLTS measurements have been performed in VPE. GaAs MESFETs prepared on Bridgman Cr-doped and LEC undoped semiinsulating substrates. A band of electron traps was detected near the metal (gate)-semiconductor interface. Near pinch-off conditions, a positive capacitance signal was found to dominate the DLTS spectra in samples prepared on Cr-doped substrates. The feature of this positive capacitance transient have been analyzed and discussed.File in questo prodotto:
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