We investigate the optical properties of InGaAs QDs emitting at 1330 nm, directly grown by Metal Organic Chemical Vapor Deposition (MOCVD) in a GaAs matrix, without indium in the barrier. The PL characterization of this new kind of QDs, shows very narrow lineshape at room temperature and a strong reduction of the temperature dependent quenching of the emission (a factor of 3 from 30 K to 300 K). The quantum external efficiency obtained by inserting such QDs into light emitting diode structures, despite the low dot density (1.6*109 cm-2), is 0.03%. This value corresponds to an individual QD efficiency about 30% higher than that reported in the literature for state of art InGaAs/InGaAs QD LEDs.
Optical properties of InGaAs QDs grown in a GaAs matrix by MOCVD, emitting at 1300 nm at room temperature
M T Todaro;M De Giorgi;V Tasco;M De Vittorio;A Passaseo;
2004
Abstract
We investigate the optical properties of InGaAs QDs emitting at 1330 nm, directly grown by Metal Organic Chemical Vapor Deposition (MOCVD) in a GaAs matrix, without indium in the barrier. The PL characterization of this new kind of QDs, shows very narrow lineshape at room temperature and a strong reduction of the temperature dependent quenching of the emission (a factor of 3 from 30 K to 300 K). The quantum external efficiency obtained by inserting such QDs into light emitting diode structures, despite the low dot density (1.6*109 cm-2), is 0.03%. This value corresponds to an individual QD efficiency about 30% higher than that reported in the literature for state of art InGaAs/InGaAs QD LEDs.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
