We present the fabrication of a Quantum Dot Microcavity Light Emitting Diode (QD-MCLED) emitting at 1.3 ?m at room temperature. The long wavelength emission is achieved by using for the first time InGaAs QDs directly grown on GaAs, by metal organic chemical vapour deposition. Electroluminescence bright emission, peaked at 1298 nm with a FWHM of 6.5 meV and a line shape independent on the applied bias is found.
First electrically injected QD-MCLED emitting at 1.3 ?m, grown by metal organic chemical vapour deposition
V Tasco;MT Todaro;M De Giorgi;M De Vittorio;A Passaseo
2004
Abstract
We present the fabrication of a Quantum Dot Microcavity Light Emitting Diode (QD-MCLED) emitting at 1.3 ?m at room temperature. The long wavelength emission is achieved by using for the first time InGaAs QDs directly grown on GaAs, by metal organic chemical vapour deposition. Electroluminescence bright emission, peaked at 1298 nm with a FWHM of 6.5 meV and a line shape independent on the applied bias is found.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
