We investigated on the growth, by molecular beam epitaxy, of InAs quantum dots on nanoscale areas of the GaAs(001) surface defined by an e-beam lithographed SiO2 mask. The selective self-assembling of the InAs dots inside the holes of the mask was obtained by a suitable choice of the growth parameters and of the pattern size. Photoluminescence from the spatially confined dots showed a blue-shifted emission but a radiative decay comparable to that of dots nucleated on the extended GaAs surface.
Selective growth of InAs quantum dots on SiO2-masked GaAs
E Placidi;L Cavigli;A Gerardino;
2009
Abstract
We investigated on the growth, by molecular beam epitaxy, of InAs quantum dots on nanoscale areas of the GaAs(001) surface defined by an e-beam lithographed SiO2 mask. The selective self-assembling of the InAs dots inside the holes of the mask was obtained by a suitable choice of the growth parameters and of the pattern size. Photoluminescence from the spatially confined dots showed a blue-shifted emission but a radiative decay comparable to that of dots nucleated on the extended GaAs surface.File in questo prodotto:
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