Ceramics with composition of Pb(Zr0.52Ti0.48) 0.975Nb0.025O3 prepared from powders obtained by hydrothermal synthesis method were investigated. A microstructure with mean grains sizes of 1-3 µm were found and the apparent density of 7.5-7.6 g/cm3. Dielectric constant and losses have been measured in the range of temperatures (30, 500 °C) with a heating/cooling rate of 0.5 °C/min at frequencies (0.1 Hz, 1 MHz), using impedance spectroscopy method. The transition heat was measured on the small ceramic samples with a differential scanning calorimeter. The permittivity was analysed with phenomenological models for relaxors. Dielectric and piezoelectric constants measured values were used as starting parameters to generate a model of a PZT actuator with ANSYS software package. The model geometry can be modified, after the simulation is performed, in order to achieve the functional objective.
Preparation and characterisation of Pb(Zr0.52 Ti0.48)0.975Nb0.025O3 ceramics. Modelling the device
Massimo Viviani;
2005
Abstract
Ceramics with composition of Pb(Zr0.52Ti0.48) 0.975Nb0.025O3 prepared from powders obtained by hydrothermal synthesis method were investigated. A microstructure with mean grains sizes of 1-3 µm were found and the apparent density of 7.5-7.6 g/cm3. Dielectric constant and losses have been measured in the range of temperatures (30, 500 °C) with a heating/cooling rate of 0.5 °C/min at frequencies (0.1 Hz, 1 MHz), using impedance spectroscopy method. The transition heat was measured on the small ceramic samples with a differential scanning calorimeter. The permittivity was analysed with phenomenological models for relaxors. Dielectric and piezoelectric constants measured values were used as starting parameters to generate a model of a PZT actuator with ANSYS software package. The model geometry can be modified, after the simulation is performed, in order to achieve the functional objective.File | Dimensione | Formato | |
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Descrizione: Preparation and characterisation of Pb(Zr0.52 Ti0.48)0.975Nb0.025O3 ceramics. Modelling the device
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