Magnetite (Fe 3O 4) thin films are synthesized by chemical vapor deposition (CVD) with the cyclohexadiene iron tricarbonyl Fe(C 6H 8)(CO) 3 liquid precursor. The growth of pure, polycrystalline, and stoichiometric Fe 3O 4 films is confirmed by X-ray diffraction, Raman spectroscopy, time-of-flight secondary ion mass spectrometry, and conversion electron Mössbauer spectroscopy. At 297 K, the resistivity for 24.8 nm (100 nm) Fe 3O 4 thin film is 17 × 10 -3 ?cm (4.2 × 10 -3 cm), indicating the good electrical quality of the as-deposited layers. Magnetoresistance (MR) up to -2.2 is measured at 297 K at 1.1 T, corresponding to 15 electron spin polarization. A gradual increase of MR is observed at low temperature. In particular, the observed MR -4.4 at 120 K (at 0.8 T) is attributed to an intrinsic enhancement of the electrons spin polarization up to 21.5. © 2012 American Institute of Physics.
Chemical vapor deposition of polycrystalline Fe 3O 4 thin films by using the cyclohexadiene iron tricarbonyl liquid precursor
Mantovan R;Cocco S;Lamperti A;
2012
Abstract
Magnetite (Fe 3O 4) thin films are synthesized by chemical vapor deposition (CVD) with the cyclohexadiene iron tricarbonyl Fe(C 6H 8)(CO) 3 liquid precursor. The growth of pure, polycrystalline, and stoichiometric Fe 3O 4 films is confirmed by X-ray diffraction, Raman spectroscopy, time-of-flight secondary ion mass spectrometry, and conversion electron Mössbauer spectroscopy. At 297 K, the resistivity for 24.8 nm (100 nm) Fe 3O 4 thin film is 17 × 10 -3 ?cm (4.2 × 10 -3 cm), indicating the good electrical quality of the as-deposited layers. Magnetoresistance (MR) up to -2.2 is measured at 297 K at 1.1 T, corresponding to 15 electron spin polarization. A gradual increase of MR is observed at low temperature. In particular, the observed MR -4.4 at 120 K (at 0.8 T) is attributed to an intrinsic enhancement of the electrons spin polarization up to 21.5. © 2012 American Institute of Physics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.