Magnetite (Fe 3O 4) thin films are synthesized by chemical vapor deposition (CVD) with the cyclohexadiene iron tricarbonyl Fe(C 6H 8)(CO) 3 liquid precursor. The growth of pure, polycrystalline, and stoichiometric Fe 3O 4 films is confirmed by X-ray diffraction, Raman spectroscopy, time-of-flight secondary ion mass spectrometry, and conversion electron Mössbauer spectroscopy. At 297 K, the resistivity for 24.8 nm (100 nm) Fe 3O 4 thin film is 17 × 10 -3 ?cm (4.2 × 10 -3 cm), indicating the good electrical quality of the as-deposited layers. Magnetoresistance (MR) up to -2.2 is measured at 297 K at 1.1 T, corresponding to 15 electron spin polarization. A gradual increase of MR is observed at low temperature. In particular, the observed MR -4.4 at 120 K (at 0.8 T) is attributed to an intrinsic enhancement of the electrons spin polarization up to 21.5. © 2012 American Institute of Physics.

Chemical vapor deposition of polycrystalline Fe 3O 4 thin films by using the cyclohexadiene iron tricarbonyl liquid precursor

Mantovan R;Cocco S;Lamperti A;
2012

Abstract

Magnetite (Fe 3O 4) thin films are synthesized by chemical vapor deposition (CVD) with the cyclohexadiene iron tricarbonyl Fe(C 6H 8)(CO) 3 liquid precursor. The growth of pure, polycrystalline, and stoichiometric Fe 3O 4 films is confirmed by X-ray diffraction, Raman spectroscopy, time-of-flight secondary ion mass spectrometry, and conversion electron Mössbauer spectroscopy. At 297 K, the resistivity for 24.8 nm (100 nm) Fe 3O 4 thin film is 17 × 10 -3 ?cm (4.2 × 10 -3 cm), indicating the good electrical quality of the as-deposited layers. Magnetoresistance (MR) up to -2.2 is measured at 297 K at 1.1 T, corresponding to 15 electron spin polarization. A gradual increase of MR is observed at low temperature. In particular, the observed MR -4.4 at 120 K (at 0.8 T) is attributed to an intrinsic enhancement of the electrons spin polarization up to 21.5. © 2012 American Institute of Physics.
2012
Istituto per la Microelettronica e Microsistemi - IMM
Conversion electrons
Cyclohexadienes
Electrical quality
Electron spin polarization
Liquid precursors
Low temperatures
Polycrystalline
Ssbauer spectroscopies
Time of flight secondary ion mass spectrometry
Electric resistance
Liquids
Magnetic moments
Raman spectroscopy
Secondary ion mass spectrometry
Spin polarization
Thin films
Vapors
X ray diffraction
Chemical vapor deposition
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/219277
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