A possible route for the synthesis of Fe3O4, Fe, and Fe/Fe3O4 bi-layers with chemical vapor deposition by employing the same Fe3(CO)12 carbonyl precursor is presented. The comprehensive structural, chemical, and morphological investigation of the as-deposited thin single films and bi-layers is performed by X-ray diffraction, X-ray reflectivity, Raman spectroscopy, and time-of-flight secondary ion mass spectrometry depth profiling. We present the possibility of performing the deposition of pure metallic Fe and Fe3O 4/?-Fe2O3 by adjusting the deposition pressure from 10- 3/- 4 Pa to 1 Pa, respectively. The integration of Fe3O4 thin films in a magnetic tunnel junction stack fully synthesized by in situ atomic layer and chemical vapor deposition processes is also presented, showing good stack stability and marginal interdiffusion. © 2011 Elsevier B.V. All rights reserved.
Chemical vapor deposition growth of Fe3O4 thin films and Fe/Fe3O4 bi-layers for their integration in magnetic tunnel junctions
Mantovan;Cocco;Lamperti;
2012
Abstract
A possible route for the synthesis of Fe3O4, Fe, and Fe/Fe3O4 bi-layers with chemical vapor deposition by employing the same Fe3(CO)12 carbonyl precursor is presented. The comprehensive structural, chemical, and morphological investigation of the as-deposited thin single films and bi-layers is performed by X-ray diffraction, X-ray reflectivity, Raman spectroscopy, and time-of-flight secondary ion mass spectrometry depth profiling. We present the possibility of performing the deposition of pure metallic Fe and Fe3O 4/?-Fe2O3 by adjusting the deposition pressure from 10- 3/- 4 Pa to 1 Pa, respectively. The integration of Fe3O4 thin films in a magnetic tunnel junction stack fully synthesized by in situ atomic layer and chemical vapor deposition processes is also presented, showing good stack stability and marginal interdiffusion. © 2011 Elsevier B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
