To elucidate in details any possible influence of the adjacent layers on perpendicular magnetic anisotropy in very thin ferromagnetic CoFeB electrodes of CoFeB/MgO based stacks, we grew by sputtering BL/CoFeB (1 nm) and BL/CoFeB (1 nm)/MgO (2 nm), being BL (buffer layer) = Ta (5 nm) or Ru (1 nm) multilayers, consisting of 30 repetitions of the bi- or tri-layers. Specular X-ray reflectivity (XRR) has been performed on both as grown and annealed (300 C in vacuum) multilayers. From XRR results, good reproducibility of each layer thickness is achieved, indicating a well-controlled film growth. Further, CoFeB/MgO interface is found to be quite smooth and stable with annealing, as shown by the limited interface width, while BL/CoFeB interface widens upon annealing, in particular when BL = Ta is used. We discuss the above findings, also considering the role of possible layer crystallinity in affecting the interface width, and tentatively relate them to the magnetic anisotropic behavior of the stacks. © 2012 Elsevier B.V. All rights reserved.

Interface width evaluation in thin layered CoFeB/MgO multilayers including Ru or Ta buffer layer by X-ray reflectivity

Lamperti;Mantovan;
2013

Abstract

To elucidate in details any possible influence of the adjacent layers on perpendicular magnetic anisotropy in very thin ferromagnetic CoFeB electrodes of CoFeB/MgO based stacks, we grew by sputtering BL/CoFeB (1 nm) and BL/CoFeB (1 nm)/MgO (2 nm), being BL (buffer layer) = Ta (5 nm) or Ru (1 nm) multilayers, consisting of 30 repetitions of the bi- or tri-layers. Specular X-ray reflectivity (XRR) has been performed on both as grown and annealed (300 C in vacuum) multilayers. From XRR results, good reproducibility of each layer thickness is achieved, indicating a well-controlled film growth. Further, CoFeB/MgO interface is found to be quite smooth and stable with annealing, as shown by the limited interface width, while BL/CoFeB interface widens upon annealing, in particular when BL = Ta is used. We discuss the above findings, also considering the role of possible layer crystallinity in affecting the interface width, and tentatively relate them to the magnetic anisotropic behavior of the stacks. © 2012 Elsevier B.V. All rights reserved.
2013
Istituto per la Microelettronica e Microsistemi - IMM
Inglese
533
79
82
4
http://www.scopus.com/inward/record.url?eid=2-s2.0-84879888254&partnerID=40&md5=9c5cc6455fb85200327707bc1b9b2b5b
Sì, ma tipo non specificato
Anisotropic behaviors
CoFeB/MgO
Interface widths
Perpendicular magnetic anisotropy
Reproducibilities
Specular x-ray reflectivities
Ta buffer layers
X ray reflectivity
Annealing
Buffer layers
Cobalt compounds
Dielectric materials
Film growth
Magnetic anisotropy
Ruthenium
Tantalum
X rays
Multilayers
cited By (since 1996)1
10
info:eu-repo/semantics/article
262
Lamperti, Alessio; Aa, ; Ahn, ; Smb, ; Ocker, ; Bc, ; Mantovan, Roberto; Ra, ; Ravelosona, ; Db,
01 Contributo su Rivista::01.01 Articolo in rivista
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/219281
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