Sub-micrometer Ni-Mn-Ga films on MgO(0 0 1) single-crystalline wafers have been prepared by radio-frequency magnetron sputtering. The structural and magnetic states of the as-received (quasi-amorphous phase) and annealed (highly ordered martensitic phase at T = 300 K) films have been examined by X-ray diffraction, and measurements of resistivity and magnetization. The annealed films demonstrate a transformation behavior typical for the bulk and show a thickness dependence of the magnetic properties.

Properties of sputter-deposited Ni-Mn-Ga thin films

Besseghini S;
2008

Abstract

Sub-micrometer Ni-Mn-Ga films on MgO(0 0 1) single-crystalline wafers have been prepared by radio-frequency magnetron sputtering. The structural and magnetic states of the as-received (quasi-amorphous phase) and annealed (highly ordered martensitic phase at T = 300 K) films have been examined by X-ray diffraction, and measurements of resistivity and magnetization. The annealed films demonstrate a transformation behavior typical for the bulk and show a thickness dependence of the magnetic properties.
2008
Istituto di Chimica della Materia Condensata e di Tecnologie per l'Energia - ICMATE
Magnetic anisotropy
Martensitic transformation
MgO(0 0 1) wafer
Ni-Mn-Ga thin film
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/219366
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