Sub-micrometer Ni-Mn-Ga films on MgO(0 0 1) single-crystalline wafers have been prepared by radio-frequency magnetron sputtering. The structural and magnetic states of the as-received (quasi-amorphous phase) and annealed (highly ordered martensitic phase at T = 300 K) films have been examined by X-ray diffraction, and measurements of resistivity and magnetization. The annealed films demonstrate a transformation behavior typical for the bulk and show a thickness dependence of the magnetic properties.

Properties of sputter-deposited Ni-Mn-Ga thin films

Besseghini S;
2008

Abstract

Sub-micrometer Ni-Mn-Ga films on MgO(0 0 1) single-crystalline wafers have been prepared by radio-frequency magnetron sputtering. The structural and magnetic states of the as-received (quasi-amorphous phase) and annealed (highly ordered martensitic phase at T = 300 K) films have been examined by X-ray diffraction, and measurements of resistivity and magnetization. The annealed films demonstrate a transformation behavior typical for the bulk and show a thickness dependence of the magnetic properties.
2008
Istituto di Chimica della Materia Condensata e di Tecnologie per l'Energia - ICMATE
Inglese
481
271
274
4
http://www.sciencedirect.com/science/article/pii/S0921509307012142
Sì, ma tipo non specificato
Magnetic anisotropy
Martensitic transformation
MgO(0 0 1) wafer
Ni-Mn-Ga thin film
Proceedings of the 7th European Symposium on Martensitic Transformations, ESOMAT 2006
6
info:eu-repo/semantics/article
262
Chernenko, Va; Besseghini, S; Hagler, M; Mullner, P; Ohtsuka, M; Stortiero, F
01 Contributo su Rivista::01.01 Articolo in rivista
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/219366
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