We study the lasing mechanism in Zn1-xCdxSe/ZnSe quantum well structures as a function of the Cd content by magnetoluminescence and absorption spectroscopy. The energy shift of the emission lines has been measured in magnetic field up to 8 T. In quantum wells with x=0.13 lasing seems to be due to free-carrier recombination, while for x=0.26 the stimulated emission is exciton-like. We also determine the threshold for the exciton bleaching by free carriers by measuring absorption in modulation doped quantum wells.

EXCITON SCREENING AND LASER PROCESSES IN Zn1-xCdxSe/ZnSe QUANTUM WELL STRUCTURES

M Lomascolo;P Prete;
1995

Abstract

We study the lasing mechanism in Zn1-xCdxSe/ZnSe quantum well structures as a function of the Cd content by magnetoluminescence and absorption spectroscopy. The energy shift of the emission lines has been measured in magnetic field up to 8 T. In quantum wells with x=0.13 lasing seems to be due to free-carrier recombination, while for x=0.26 the stimulated emission is exciton-like. We also determine the threshold for the exciton bleaching by free carriers by measuring absorption in modulation doped quantum wells.
1995
9789810220211
Zn1-xCdxSe/ZnSe QUANTUM WELL
Lasing process
exciton screening
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/220484
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? ND
social impact