We study the lasing mechanism in Zn1-xCdxSe/ZnSe quantum well structures as a function of the Cd content by magnetoluminescence and absorption spectroscopy. The energy shift of the emission lines has been measured in magnetic field up to 8 T. In quantum wells with x=0.13 lasing seems to be due to free-carrier recombination, while for x=0.26 the stimulated emission is exciton-like. We also determine the threshold for the exciton bleaching by free carriers by measuring absorption in modulation doped quantum wells.

EXCITON SCREENING AND LASER PROCESSES IN Zn1-xCdxSe/ZnSe QUANTUM WELL STRUCTURES

M Lomascolo;P Prete;
1995

Abstract

We study the lasing mechanism in Zn1-xCdxSe/ZnSe quantum well structures as a function of the Cd content by magnetoluminescence and absorption spectroscopy. The energy shift of the emission lines has been measured in magnetic field up to 8 T. In quantum wells with x=0.13 lasing seems to be due to free-carrier recombination, while for x=0.26 the stimulated emission is exciton-like. We also determine the threshold for the exciton bleaching by free carriers by measuring absorption in modulation doped quantum wells.
1995
Inglese
David J. Lockwood
Proceedings of the "22nd International Conference on The Physics of Semiconductors"
22nd International Conference on The Physics of Semiconductors
2
1528
1531
4
9789810220211
World Scientific Publishing Co. Pte. Ltd.
Singapore
SINGAPORE
Sì, ma tipo non specificato
August 15-19, 1994
Vancouver, Canada
Zn1-xCdxSe/ZnSe QUANTUM WELL
Lasing process
exciton screening
10
none
Calcagnile, L; Lomascolo, M; Rinaldi, R; Prete, P; Cingolani, R; Vanzetti, L; Bonanni, A; Bassani, F; Sorba, L; Franciosi, A
273
info:eu-repo/semantics/conferenceObject
04 Contributo in convegno::04.01 Contributo in Atti di convegno
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/220484
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