We report the demonstration of dc and ac Josephson effects in Nb/Al2O3/Al/MgB2 thin-film heterostructure. The heterostructure exhibits moderately hysteretic current-voltage characteristic with a dc Josephson current branch and regular microwave-induced Shapiro steps. From conductance spectrum, a gap of about 2 meV at 7.7 K is estimated for the proximized surface of MgB2 electrode
Josephson effect in Nb/Al2O3/Al/MgB2 large-area thin-film heterostructures
Martucciello N;Ferdeghini C;
2002
Abstract
We report the demonstration of dc and ac Josephson effects in Nb/Al2O3/Al/MgB2 thin-film heterostructure. The heterostructure exhibits moderately hysteretic current-voltage characteristic with a dc Josephson current branch and regular microwave-induced Shapiro steps. From conductance spectrum, a gap of about 2 meV at 7.7 K is estimated for the proximized surface of MgB2 electrodeFile in questo prodotto:
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