CNR Institutional Research Information System

We report the demonstration of dc and ac Josephson effects in Nb/Al2O3/Al/MgB2 thin-film heterostructure. The heterostructure exhibits moderately hysteretic current-voltage characteristic with a dc Josephson current branch and regular microwave-induced Shapiro steps. From conductance spectrum, a gap of about 2 meV at 7.7 K is estimated for the proximized surface of MgB2 electrode

Josephson effect in Nb/Al2O3/Al/MgB2 large-area thin-film heterostructures

Martucciello N;Ferdeghini C;
2002

Abstract

We report the demonstration of dc and ac Josephson effects in Nb/Al2O3/Al/MgB2 thin-film heterostructure. The heterostructure exhibits moderately hysteretic current-voltage characteristic with a dc Josephson current branch and regular microwave-induced Shapiro steps. From conductance spectrum, a gap of about 2 meV at 7.7 K is estimated for the proximized surface of MgB2 electrode
2002
Inglese
80
16
2949
2951
3
2-s2.0-79956054613
http://scitation.aip.org/content/aip/journal/apl/80/16/10.1063/1.1472470
Sì, ma tipo non specificato
6
info:eu-repo/semantics/article
262
Carapella, G; Martucciello, N; Costabile, G; Ferdeghini, C; Ferrando, V; Grassano, G
01 Contributo su Rivista::01.01 Articolo in rivista
none
01.01 Articolo in rivista
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/220629
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 44
  • ???jsp.display-item.citation.isi??? ND
social impact