High-temperature gas-sensitive materials may require dedicated microheaters and temperature-compatible microelectronic circuits integrated with a complete microsystem. This paper deals with preliminary experiments designed for measuring temperature profiles in and near platinum integrated microheaters deposited on silicon substrates. The modulated photoreflectance techniques utilized in this work has also been proved to be useful for a thin-film metal structure with a lateral dimension as low as 20 ?m.
Application of a new technique for temperature-profile measurements in microheaters
G Caruso;V Foglietti;A Bearzotti
1995
Abstract
High-temperature gas-sensitive materials may require dedicated microheaters and temperature-compatible microelectronic circuits integrated with a complete microsystem. This paper deals with preliminary experiments designed for measuring temperature profiles in and near platinum integrated microheaters deposited on silicon substrates. The modulated photoreflectance techniques utilized in this work has also been proved to be useful for a thin-film metal structure with a lateral dimension as low as 20 ?m.File in questo prodotto:
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