Several 2 inch CdZnTe crystals have been grown by the Vertical Bridgman technique and growth interface shape has been studied by photoluminescence mapping. The results show that it is possible to obtain a convex interface shape for the whole crystal by the combined use of a highly thermally conductive ampoule support and an element covering melt top, with higher thermal conductivity than the CdZnTe melt preventing the direct contact of melt and vapour.
Control of the interface shape in vertical Bridgman grown CdZnTe crystals for X-ray detector applications
Zappettini Andrea;Zha Mingzheng;Calestani Davide
2012
Abstract
Several 2 inch CdZnTe crystals have been grown by the Vertical Bridgman technique and growth interface shape has been studied by photoluminescence mapping. The results show that it is possible to obtain a convex interface shape for the whole crystal by the combined use of a highly thermally conductive ampoule support and an element covering melt top, with higher thermal conductivity than the CdZnTe melt preventing the direct contact of melt and vapour.File in questo prodotto:
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