Active elements for humidity sensors based on alkali-doped and undoped TiO2films have been prepared by the sol---gel technique. TiO2-basedfilms are deposited onto Al2O3 substrates with comb-type Au electrodes by dip-coating, from the appropriate solutions, to obtain four different compositions of 1, 3, 6, and 10 at.% Li and K, with respect to the alkali metal/Ti system. The humidity-sensing electrical properties of the films are evaluated using d.c. and a.c. measurements. The electrical characterization of TiO2films doped with 10 at.% K shows that this material has some unique properties. Resistence versus relative humidity(rh) values show variations as high as seven orders of magnitude in the humidity range tested. Very high humidity sensitivity is also observed at the lowest rh values (4-10% rh), at 40°C, when the resistence is measured at frequencies lower than 1 Hz. The results also show great stability over time. The possibility of modifying the rh sensitivity of TiO2, films doped with 10 at.% K by varying the frequency at which the resistance is measured is a characteristic that allows this material to be described as smart.
Sol-gel processed TiO2-based thin films as innovative humidity sensors
Andrea Bearzotti;
1995
Abstract
Active elements for humidity sensors based on alkali-doped and undoped TiO2films have been prepared by the sol---gel technique. TiO2-basedfilms are deposited onto Al2O3 substrates with comb-type Au electrodes by dip-coating, from the appropriate solutions, to obtain four different compositions of 1, 3, 6, and 10 at.% Li and K, with respect to the alkali metal/Ti system. The humidity-sensing electrical properties of the films are evaluated using d.c. and a.c. measurements. The electrical characterization of TiO2films doped with 10 at.% K shows that this material has some unique properties. Resistence versus relative humidity(rh) values show variations as high as seven orders of magnitude in the humidity range tested. Very high humidity sensitivity is also observed at the lowest rh values (4-10% rh), at 40°C, when the resistence is measured at frequencies lower than 1 Hz. The results also show great stability over time. The possibility of modifying the rh sensitivity of TiO2, films doped with 10 at.% K by varying the frequency at which the resistance is measured is a characteristic that allows this material to be described as smart.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.


