Sn-119 Mossbauer measurements have been made on a 3C-SiC single crystal implanted with 60 keV precursor radioactive In-119* ions at ISOLDE/CERN. Spectra collected at sample temperatures of 300-670 K have been analysed in terms of two single lines and a quadrupole split doublet, which based on their isomer shifts are assigned respectively to Sn ions located on substitutional Si sites (SnSi) and interstitial sites (SnI) and in defect complexes near substitutional sites. The substitutional SnSi fraction increases from 25% at room temperature to 60% at 680 K.
Mossbauer study of Sn-119 in In-119* implanted 3C-SiC
Mantovan Roberto;
2012
Abstract
Sn-119 Mossbauer measurements have been made on a 3C-SiC single crystal implanted with 60 keV precursor radioactive In-119* ions at ISOLDE/CERN. Spectra collected at sample temperatures of 300-670 K have been analysed in terms of two single lines and a quadrupole split doublet, which based on their isomer shifts are assigned respectively to Sn ions located on substitutional Si sites (SnSi) and interstitial sites (SnI) and in defect complexes near substitutional sites. The substitutional SnSi fraction increases from 25% at room temperature to 60% at 680 K.File in questo prodotto:
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