Phase-Change Memory (PCM) cell is the most promising technology as post-Flash Non-Volatile memory (NVM). Among the different proposed cell structures, ?trench allows to simultaneously achieve low programming currents, small cell size, easy tunability and good dimensional control. Aim of this paper is to investigate the optimization and fine tuning capability of this cell architecture. Based on theoretical analysis and experimental results, the dependence of the PCM electrical parameters on the cell structure and on the geometric dimensions is assessed. An optimized ?trench cell with a programming current of 450 ?A at 1.5 V and a set resistance of 5 k? is finally presented. © 2005 IEEE.
?-Trench phase-change memory cell engineering and optimization
Cecchini R;
2005
Abstract
Phase-Change Memory (PCM) cell is the most promising technology as post-Flash Non-Volatile memory (NVM). Among the different proposed cell structures, ?trench allows to simultaneously achieve low programming currents, small cell size, easy tunability and good dimensional control. Aim of this paper is to investigate the optimization and fine tuning capability of this cell architecture. Based on theoretical analysis and experimental results, the dependence of the PCM electrical parameters on the cell structure and on the geometric dimensions is assessed. An optimized ?trench cell with a programming current of 450 ?A at 1.5 V and a set resistance of 5 k? is finally presented. © 2005 IEEE.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
