We have developed a new technique for SiC heteroepitaxy on Si by means of supersonic free jets of C60. The carbide synthesis can be achieved by the kinetic activation of the process. The electronic and structural properties of the film can be controlled by monitoring the beam parameters (flux and particle energy). SiC films were grown in Ultra High Vacuum on Si(111)7x7, at substrates temperatures of 800°C and 750°C, using two supersonic beams of C60 characterized by a particle energy of 5eV and 20eV. Surface electronic and structural characterisations were done both in-situ and the structural properties improved.
SiC Synthesis by fullerence free jets on Si(111) at low temperatures
Aversa L;Verucchi R;Pedio M;Iannotta S
2003
Abstract
We have developed a new technique for SiC heteroepitaxy on Si by means of supersonic free jets of C60. The carbide synthesis can be achieved by the kinetic activation of the process. The electronic and structural properties of the film can be controlled by monitoring the beam parameters (flux and particle energy). SiC films were grown in Ultra High Vacuum on Si(111)7x7, at substrates temperatures of 800°C and 750°C, using two supersonic beams of C60 characterized by a particle energy of 5eV and 20eV. Surface electronic and structural characterisations were done both in-situ and the structural properties improved.File in questo prodotto:
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