Systematic temperature-dependent studies of optical absorption and photoluminescence in Zn1-xCdxSe/ZnSe strained-layer multiple-quantum-well samples grown by molecular-beam epitaxy were used to evaluate the well-width dependence and the composition dependence of the major excitonic properties. Exciton binding energies calculated by means of a variational method were found in good agreement with the experimental values obtained from the analysis of the absorption line shapes. The well-width dependence of the excitonic eigenstates were well reproduced by envelope-function calculations that included the effect of pseudomorphic strain.

EXCITON SPECTROSCOPY IN ZN1-XCDXSE/ZNSE QUANTUM-WELLS

PRETE P;LOMASCOLO M;SORBA L;
1995

Abstract

Systematic temperature-dependent studies of optical absorption and photoluminescence in Zn1-xCdxSe/ZnSe strained-layer multiple-quantum-well samples grown by molecular-beam epitaxy were used to evaluate the well-width dependence and the composition dependence of the major excitonic properties. Exciton binding energies calculated by means of a variational method were found in good agreement with the experimental values obtained from the analysis of the absorption line shapes. The well-width dependence of the excitonic eigenstates were well reproduced by envelope-function calculations that included the effect of pseudomorphic strain.
1995
Istituto per la Microelettronica e Microsistemi - IMM
EXCITON SPECTROSCOPY
ZN1-XCDXSE/ZNSE QUANTUM-WELLS
exciton binding energies
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/231139
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