Gas sensors based on SnO2 films deposited by sol-gel on a Si substrate have been fabricated, characterised and tested. The results of structural characterisation and the sensing tests have shown the validity of this technological approach, which is a very promising step towards the full integration of the gas sensors in VLSI Si technology.

A SnO2 microsensor device for sub-ppm NO2 detection

G Leo;M Mazzer;R Rella;P Siciliano;S Capone;
1999

Abstract

Gas sensors based on SnO2 films deposited by sol-gel on a Si substrate have been fabricated, characterised and tested. The results of structural characterisation and the sensing tests have shown the validity of this technological approach, which is a very promising step towards the full integration of the gas sensors in VLSI Si technology.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/232811
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