The capability of hydrogen to passivate nitrogen in dilute nitrides is exploited to in-plane engineer the electronic properties of Ga(AsN)/GaAs heterostructures. Two methods are presented: i) by deposition of hydrogen-opaque metallic masks on Ga(AsN) and subsequent hydrogen irradiation, we artificially create zones of the crystal having the band gap of untreated Ga(AsN) surrounded by GaAs-like barriers; ii) by employing an intense (~100 nA) and narrow (~100 nm) beam of electrons, we dissociate the complexes formed by N and H in a spatially delimited part of a hydrogenated Ga(AsN) sample. As a consequence, in the spatial regions irradiated by the electron beam, hydrogenated Ga(AsN) recovers the smaller energy gap it had before hydrogen implantation.
Hydrogen-induced Nitrogen Passivation in Dilute Nitrides: A Novel Approach to Defect Engineering
G Pettinari;G Salviati;L Lazzarini;N Armani;L Mariucci;F Martelli;S Rubini
2007
Abstract
The capability of hydrogen to passivate nitrogen in dilute nitrides is exploited to in-plane engineer the electronic properties of Ga(AsN)/GaAs heterostructures. Two methods are presented: i) by deposition of hydrogen-opaque metallic masks on Ga(AsN) and subsequent hydrogen irradiation, we artificially create zones of the crystal having the band gap of untreated Ga(AsN) surrounded by GaAs-like barriers; ii) by employing an intense (~100 nA) and narrow (~100 nm) beam of electrons, we dissociate the complexes formed by N and H in a spatially delimited part of a hydrogenated Ga(AsN) sample. As a consequence, in the spatial regions irradiated by the electron beam, hydrogenated Ga(AsN) recovers the smaller energy gap it had before hydrogen implantation.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
