Carbon atoms in graphene gain magnetic moments when in contact with magnetic substrates, following the macroscopic substrate alignment even at ambient temperature [12]. On the other hand, magnetically doped topological insulators are ferromagnetic only at low temperatures (Tc = 13K in Bi2-xMnxTe3)[2]. Here we report chemical selective polarization dependent X-ray experiments on Fe/Bi2-xMnxTe3 interfaces, where we followed the temperature dependence of the magnetic properties of Mn doped topological insulator in proximity with mag-netic iron film. We find the presence of robust long range ferromagnetism in Mn induced by the magnetic proximity effect and maintained up to the room temperature [13]. These results trace path to interface-controlled ferromagnetism in novel (graphene and topological insulators) "flatlands"

"Flatlands" in Spiintronics: Controlling Magnetism by Magnetic Proximity Effect

I Vobornik;J Fujii;G Panaccione;
2012

Abstract

Carbon atoms in graphene gain magnetic moments when in contact with magnetic substrates, following the macroscopic substrate alignment even at ambient temperature [12]. On the other hand, magnetically doped topological insulators are ferromagnetic only at low temperatures (Tc = 13K in Bi2-xMnxTe3)[2]. Here we report chemical selective polarization dependent X-ray experiments on Fe/Bi2-xMnxTe3 interfaces, where we followed the temperature dependence of the magnetic properties of Mn doped topological insulator in proximity with mag-netic iron film. We find the presence of robust long range ferromagnetism in Mn induced by the magnetic proximity effect and maintained up to the room temperature [13]. These results trace path to interface-controlled ferromagnetism in novel (graphene and topological insulators) "flatlands"
2012
Istituto Officina dei Materiali - IOM -
978-3-642-20643-6
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/234600
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