In this letter, we investigate bipolar resistive switching of CuTCNQ-based memory cells in which various types of oxides Are incorporated as dedicated switching layer (SL) in a bottom electrode\oxide\CuTCNQ\top electrode configuration. The bottom electrode was Pt as well as n(+)Si. As oxide SL, we used Al(2)O(3), HfO(2), ZrO(2), and SiO(2). Au was employed as the top electrode. The basic memory characteristics appear to be independent of the type of oxide used. This gives clear indication that the materials investigated as SL mainly act as matrix in which conductive channels are formed and dissolved.
Bipolar Resistive Electrical Switching of CuTCNQ Memories Incorporating a Dedicated Switching Layer
Sabina Spiga;
2009
Abstract
In this letter, we investigate bipolar resistive switching of CuTCNQ-based memory cells in which various types of oxides Are incorporated as dedicated switching layer (SL) in a bottom electrode\oxide\CuTCNQ\top electrode configuration. The bottom electrode was Pt as well as n(+)Si. As oxide SL, we used Al(2)O(3), HfO(2), ZrO(2), and SiO(2). Au was employed as the top electrode. The basic memory characteristics appear to be independent of the type of oxide used. This gives clear indication that the materials investigated as SL mainly act as matrix in which conductive channels are formed and dissolved.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
