A combined BIS-XPS study of the Pdsingle bondSi(111)7 × 7 interface formation is presented. A Pd2Si-like distribution of partial d density of empty states is found starting from the early stages of Sisingle bondPd bond formation.
BIS INVESTIGATION OF PD-SI(111)7X7 INTERFACE FORMATION
S Turchini;
1990
Abstract
A combined BIS-XPS study of the Pdsingle bondSi(111)7 × 7 interface formation is presented. A Pd2Si-like distribution of partial d density of empty states is found starting from the early stages of Sisingle bondPd bond formation.File in questo prodotto:
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