We performed thermo and piezoresistive measurements on GaN bulk samples grown with different techniques (PIMBE, MOCVD). By analysing the I(V) characteristics as a function of temperature, we found a temperature coefficient of resistance (TCR = ?) of the same order of magnitude (a few percent per °C) as commercial thermistors, with a peak value of 19%/°C. The measured gauge factor is about five, a value comparable with that obtained for GaN by other groups. We also performed PC vs. temperature measurements on a MQW GaN/AlGaN finding a peak shift of about 0.4 meV/K.
Thermoresistive and piezoresistive properties of wurtzite N-GaN
Sa;Pa;Passaseo;
2002
Abstract
We performed thermo and piezoresistive measurements on GaN bulk samples grown with different techniques (PIMBE, MOCVD). By analysing the I(V) characteristics as a function of temperature, we found a temperature coefficient of resistance (TCR = ?) of the same order of magnitude (a few percent per °C) as commercial thermistors, with a peak value of 19%/°C. The measured gauge factor is about five, a value comparable with that obtained for GaN by other groups. We also performed PC vs. temperature measurements on a MQW GaN/AlGaN finding a peak shift of about 0.4 meV/K.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
