The work reports on the characterization of high purity epitaxial 4H-SiC grown by liquid phase epitaxy and the performances of Au-Ni/4H-SiC detectors fabricated on the same material. X-ray diffraction and topography as well as I-V, C-V and DLTS measurements are used for the evaluation of the material properties and device characteristics. The X-ray detection abilities are evaluated by pulse-height spectra measurements of the 241Am. Preliminary results of the detector hardness to fast neutron and gamma ray radiations are also reported.

Surface barrier 4H-SiC soft X-ray detecor for hot plasmas diagnostic

E Gombia;C Ferrari;
2012

Abstract

The work reports on the characterization of high purity epitaxial 4H-SiC grown by liquid phase epitaxy and the performances of Au-Ni/4H-SiC detectors fabricated on the same material. X-ray diffraction and topography as well as I-V, C-V and DLTS measurements are used for the evaluation of the material properties and device characteristics. The X-ray detection abilities are evaluated by pulse-height spectra measurements of the 241Am. Preliminary results of the detector hardness to fast neutron and gamma ray radiations are also reported.
2012
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
Inglese
S. Hascík, J. Osvald
Ninth International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM2012)
247
250
978-1-4673-1195-3
Sì, ma tipo non specificato
November 11-15, 2012
Smolenice (Slovakia)
X-ray detectors
4H-SiC
electrical and structural characterizations
2
info:eu-repo/semantics/conferenceObject
none
274
04 Contributo in convegno::04.02 Abstract in Atti di convegno
F. Dubecky ; E. Gombia ; G. Vanko ; C. Ferrari ; B. Zatko ; P. Kovác ; D. Bacek ; M. Baldini ; L. Ryc ;V. Necas
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/236220
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