Silicon suspended wires with a cross section of about 0.25 mum(2) have been fabricated by means of a simple process, starting from a SOI n-type wafer. Standard lithography, isotropic and anisotropic etchings were used. The process requires only two masks with a minimum dimension of 4 mum. After the definition of the suspended structures a further oxidation step was performed in order to reduce the silicon core dimensions. Particular care was devoted to the rinsing step to avoid any sticking problem to the substrate.
Micromachined silicon suspended wires with submicrometric dimensions
Piotto M
2001
Abstract
Silicon suspended wires with a cross section of about 0.25 mum(2) have been fabricated by means of a simple process, starting from a SOI n-type wafer. Standard lithography, isotropic and anisotropic etchings were used. The process requires only two masks with a minimum dimension of 4 mum. After the definition of the suspended structures a further oxidation step was performed in order to reduce the silicon core dimensions. Particular care was devoted to the rinsing step to avoid any sticking problem to the substrate.File in questo prodotto:
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