Systematic studies of polaritons in single stepped quantum wells are performed, and the presence of forbidden transitions in optical spectra are taken as a fingerprint of nonhomogeneous indium concentration. The large intensities of such transitions for well thicknesses in the range of quasi-two-dimensional exciton behavior are pointed out. Finally, second harmonic generation excited at half gap is found to be enhanced with respect to the bulk contribution as suggested by the theory.

Linear and nonlinear optical properties of stepped InxGa1-xAs/GaAs quantum wells

Tomassini N;D'Andrea A;Righini M;Selci S;Schiumarini D;
1998

Abstract

Systematic studies of polaritons in single stepped quantum wells are performed, and the presence of forbidden transitions in optical spectra are taken as a fingerprint of nonhomogeneous indium concentration. The large intensities of such transitions for well thicknesses in the range of quasi-two-dimensional exciton behavior are pointed out. Finally, second harmonic generation excited at half gap is found to be enhanced with respect to the bulk contribution as suggested by the theory.
1998
optical harmonic generation indium compounds gallium arsenide III-V semiconductors semiconductor quantum wells polaritons excitons reflectivity
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/237142
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