We explored the feasibility of employing strontium titanate (SrTiO3) as semiconducting material in field-effect metal-insulator-semiconductor epitaxial heterostructures. This idea was suggested by the observation of a dramatic effect of the oxygen deficiency on SrTiO3 - ? transport properties, which brings about metallic behavior with low-temperature mobility values comparable with those commonly found for silicon. By pulsed-laser deposition, we realized patterned field-effect devices, showing a resistance enhancement up to 90%. This promising result could open perspectives for crystalline-oxide electronics.
SrTiO3-based Metal-Insulator-Semiconductor heterostructures
IPallecchi;LPellegrino;
2001
Abstract
We explored the feasibility of employing strontium titanate (SrTiO3) as semiconducting material in field-effect metal-insulator-semiconductor epitaxial heterostructures. This idea was suggested by the observation of a dramatic effect of the oxygen deficiency on SrTiO3 - ? transport properties, which brings about metallic behavior with low-temperature mobility values comparable with those commonly found for silicon. By pulsed-laser deposition, we realized patterned field-effect devices, showing a resistance enhancement up to 90%. This promising result could open perspectives for crystalline-oxide electronics.File in questo prodotto:
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