In this article we review the extensive experimental work on the compositional mapping of semiconductor quantum dots and rings. After a brief introduction of the various experimental techniques used for this purpose, the body of experimental results is presented, ordered by experimental technique (transmission electron microscopy, X-ray diffraction, photoelectron microscopy, scanning probe microscopy, and ion-atom probes) and material system (mainly III-Vs and Ge/Si). The article concludes with a discussion which critically compares these results and outlines some general trends.

Compositional mapping of semiconductor quantum dots and rings

Biasiol G;Heun S
2011

Abstract

In this article we review the extensive experimental work on the compositional mapping of semiconductor quantum dots and rings. After a brief introduction of the various experimental techniques used for this purpose, the body of experimental results is presented, ordered by experimental technique (transmission electron microscopy, X-ray diffraction, photoelectron microscopy, scanning probe microscopy, and ion-atom probes) and material system (mainly III-Vs and Ge/Si). The article concludes with a discussion which critically compares these results and outlines some general trends.
2011
Istituto Officina dei Materiali - IOM -
Istituto Nanoscienze - NANO
Inglese
500
4-5
117
173
Sì, ma tipo non specificato
Composition maps
Quantum dots
Quantum rings
Microscopy
Spectroscopy
2
info:eu-repo/semantics/article
262
Biasiol, G; Heun, S
01 Contributo su Rivista::01.01 Articolo in rivista
none
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/237457
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