ABSTRACT Ion implantation of boron and phosphorus in device quality a-SixC1-x:H films deposited by Ultra High Vacuum Plasma Enhanced Chemical Vapor Deposition (UHV PECVD) has been performed. The effects of damage and of damage recovering after annealing were investigated by optical absorption, electrical conductivity and infrared (IR) spectroscopy measurements. It is found that samples doped by phosphorus implantation can have dark conductivities as high as those obtained on samples doped with boron, either by ion implantation or gas phase.
Effect of Boron and Phosphorus Ion Implantation on a-SixC1-x:H Thin Films
Summonte;
1992
Abstract
ABSTRACT Ion implantation of boron and phosphorus in device quality a-SixC1-x:H films deposited by Ultra High Vacuum Plasma Enhanced Chemical Vapor Deposition (UHV PECVD) has been performed. The effects of damage and of damage recovering after annealing were investigated by optical absorption, electrical conductivity and infrared (IR) spectroscopy measurements. It is found that samples doped by phosphorus implantation can have dark conductivities as high as those obtained on samples doped with boron, either by ion implantation or gas phase.File in questo prodotto:
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