The reversible shift of the TMI of a manganite thin film was obtained by field effect. By taking advantage of the planar side gate geometry as well as of the high dielectric permittivity substrate, it was possible to observe a shift by 1.3 K of TMI, plus a change in resistance by as much as 20%, demonstrating a remarkable modulation capability of charge carrier density.
Reversible shift of the transition temperature of manganites in planar field effect devices patterned by atomic force microscope
IPallecchi;LPellegrino;
2003
Abstract
The reversible shift of the TMI of a manganite thin film was obtained by field effect. By taking advantage of the planar side gate geometry as well as of the high dielectric permittivity substrate, it was possible to observe a shift by 1.3 K of TMI, plus a change in resistance by as much as 20%, demonstrating a remarkable modulation capability of charge carrier density.File in questo prodotto:
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