A band-stop resonator on silicon wafer with a micromachined silicon membrane is presented in this paper. As a selective frequency component, a frequency tunable magnetostatic wave (MSW) straight edge resonator (SER), made of a YIG film, has been used. Frequency tunability ranged between 4.5 GHz-7.5 GHz for different DC magnetic biasing fields. The maximum measured attenuation for a bulk silicon supported resonator in this frequency domain was -25 dB at 5.5 GHz. For a membrane supported resonator, the maximum measured attenuation was -42 dB at 5.63 GHz, for sample #1 SER, and -36 dB at 5.34 GHz for sample #2 SER.
Micromachined Magnetostatic Wave Band-Stop Resonator
R Marcelli;
2002
Abstract
A band-stop resonator on silicon wafer with a micromachined silicon membrane is presented in this paper. As a selective frequency component, a frequency tunable magnetostatic wave (MSW) straight edge resonator (SER), made of a YIG film, has been used. Frequency tunability ranged between 4.5 GHz-7.5 GHz for different DC magnetic biasing fields. The maximum measured attenuation for a bulk silicon supported resonator in this frequency domain was -25 dB at 5.5 GHz. For a membrane supported resonator, the maximum measured attenuation was -42 dB at 5.63 GHz, for sample #1 SER, and -36 dB at 5.34 GHz for sample #2 SER.File in questo prodotto:
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