This work presents the experimental realization and the performances of a magnetostatic microwave straight edge tunable resonator (SER) placed on a silicon membrane. The aim of this approach is to study a miniaturised device, integrable in a planar micromachined microwave circuit. S11 and S21 parameters of this device are presented for different magnetic bias fields, exhibiting frequency tunability between 4.2 GHz and 7.25 GHz. The utilization of silicon membranes to support these devices offers important openings toward the integration of magnetostatic wave devices with micromachined structures.
Microwave Tunable Straight Edge Resonator on Silicon Membrane
R Marcelli
2000
Abstract
This work presents the experimental realization and the performances of a magnetostatic microwave straight edge tunable resonator (SER) placed on a silicon membrane. The aim of this approach is to study a miniaturised device, integrable in a planar micromachined microwave circuit. S11 and S21 parameters of this device are presented for different magnetic bias fields, exhibiting frequency tunability between 4.2 GHz and 7.25 GHz. The utilization of silicon membranes to support these devices offers important openings toward the integration of magnetostatic wave devices with micromachined structures.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
