This work presents performances of a tunable microwave straight edge resonator (SER) on a silicon membrane. The aim of this approach is to obtain a miniaturised MSW device, integrable in a planar microwave circuit. S11 and S21 parameters of this device are presented for various magnetic polarizing fields showing frequency tunability between approximately 4.2 GHz and 7.25 GHz. Using silicon membranes to support these devices offers important openings toward SER integration in MMIC

Tunable Microwave SER on Silicon Membrane

R Marcelli
2000

Abstract

This work presents performances of a tunable microwave straight edge resonator (SER) on a silicon membrane. The aim of this approach is to obtain a miniaturised MSW device, integrable in a planar microwave circuit. S11 and S21 parameters of this device are presented for various magnetic polarizing fields showing frequency tunability between approximately 4.2 GHz and 7.25 GHz. Using silicon membranes to support these devices offers important openings toward SER integration in MMIC
2000
Istituto per la Microelettronica e Microsistemi - IMM
0-7803-5885-6
Micromachining
Magnetostatic Waves
Resonators
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/238017
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? ND
social impact