This work presents performances of a tunable microwave straight edge resonator (SER) on a silicon membrane. The aim of this approach is to obtain a miniaturised MSW device, integrable in a planar microwave circuit. S11 and S21 parameters of this device are presented for various magnetic polarizing fields showing frequency tunability between approximately 4.2 GHz and 7.25 GHz. Using silicon membranes to support these devices offers important openings toward SER integration in MMIC

Tunable Microwave SER on Silicon Membrane

R Marcelli
2000

Abstract

This work presents performances of a tunable microwave straight edge resonator (SER) on a silicon membrane. The aim of this approach is to obtain a miniaturised MSW device, integrable in a planar microwave circuit. S11 and S21 parameters of this device are presented for various magnetic polarizing fields showing frequency tunability between approximately 4.2 GHz and 7.25 GHz. Using silicon membranes to support these devices offers important openings toward SER integration in MMIC
2000
Istituto per la Microelettronica e Microsistemi - IMM
Inglese
Editors: Sergiu Iordanescu and Doina Vancu
Proceedings of the 23rd Edition of the International Semiconductor Conference, IEEE CAS 2000
23rd Edition of the International Semiconductor Conference, IEEE CAS 2000
241
244
4
0-7803-5885-6
CAS Office
Bucuresti
ROMANIA
Sì, ma tipo non specificato
10-14 October, 2000
Sinaia, Romania
Micromachining
Magnetostatic Waves
Resonators
3
none
Sajin, G; Matei, E; Marcelli, R
273
info:eu-repo/semantics/conferenceObject
04 Contributo in convegno::04.01 Contributo in Atti di convegno
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/238017
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