In this paper, the nonlinear transmission lines (NLTLs) for picosecond shockwaves generation, manufactured on GaAs membrane are analysed for the first time. A comparison between the performances obtained by using NETLs on GaAs bulk as well as on GaAs membrane is performed by computer simulation. It is shown that the NLTL realised on GaAs membrane is able to generate shockwaves having shorter fall-time and larger amplitude compare to the NLTL realised on GaAs bulk, for the same number of Schottky diodes and Bragg frequency

Nonlinear Transmission Lines on GaAs Membranes for Picosecond Large Amplitude Shockwaves Generation

G Bartolucci;R Marcelli;
1997

Abstract

In this paper, the nonlinear transmission lines (NLTLs) for picosecond shockwaves generation, manufactured on GaAs membrane are analysed for the first time. A comparison between the performances obtained by using NETLs on GaAs bulk as well as on GaAs membrane is performed by computer simulation. It is shown that the NLTL realised on GaAs membrane is able to generate shockwaves having shorter fall-time and larger amplitude compare to the NLTL realised on GaAs bulk, for the same number of Schottky diodes and Bragg frequency
1997
Istituto per la Microelettronica e Microsistemi - IMM
Inglese
Editors: Sergiu Iordanescu and Doina Vancu
Proceedings of the 20th Edition of the International Semiconductor Conference, IEEE CAS '97
20th Edition of the International Semiconductor Conference, IEEE CAS '97
353
356
4
0-7803-3804-9
CAS Office
Bucuresti
ROMANIA
Sì, ma tipo non specificato
7-11 October 1997
Sinaia, Romania
GaAs
Nonlinear Transmission Lines
Schok-Waves
Solitons
6
none
Simion, S; Bartolucci, G; Marcelli, R; Müller, A; Szentpali, B; Riesz, F
273
info:eu-repo/semantics/conferenceObject
04 Contributo in convegno::04.01 Contributo in Atti di convegno
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/238077
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