A 1.5 ?m thin SiO2/Si3N4/SiO 2 membrane was manufactured on ?100? Silicon substrate. Also a 10-20 ?m thin GaAs membrane was manufactured using a new etching solution. Both types of membranes are destined to be used as support for microwave circuits; this has as effect a major improvement of circuits' performances

Dielectric and Semiconductor Membranes as Support for Microwave Circuits

R Marcelli;
1997

Abstract

A 1.5 ?m thin SiO2/Si3N4/SiO 2 membrane was manufactured on ?100? Silicon substrate. Also a 10-20 ?m thin GaAs membrane was manufactured using a new etching solution. Both types of membranes are destined to be used as support for microwave circuits; this has as effect a major improvement of circuits' performances
1997
Istituto per la Microelettronica e Microsistemi - IMM
Inglese
Editors: Sergiu Iordanescu and Doina Vancu
Proceedings of the 20th Edition of the International Semiconductor Conference, IEEE CAS '97
20th Edition of the International Semiconductor Conference, IEEE CAS '97
549
552
4
0-7803-3804-9
CAS Office
Bucuresti
ROMANIA
Sì, ma tipo non specificato
7-11 October 1997
Sinaia, Romania
Membranes
Microwave Circuits
1
none
A. Müller; I. Petrini; V. Avramescu; R. Müller; D. Vasilache; P. Cosmin; I. Cernica; R. Marcelli; V. Foglietti
273
info:eu-repo/semantics/conferenceObject
04 Contributo in convegno::04.01 Contributo in Atti di convegno
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/238080
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