We report an angle-resolved photoemission study of the surface electronic structure of the indium-rich InSb(001)-c(8 × 2) surface, combined with scanning tunneling microscopy and spectroscopy. The reconstructed surface is found to be semiconducting and exhibits no band bending at room temperature. We identify several different surface states, analyze their properties and determine the atomic origin of the most prominent surface state band observed close to the valence band maximum. The electronic band structure is found to exhibit a temperature induced shift, which is quantitatively explained from the change of the chemical potential with temperature, combined with the formation of a surface photovoltage at low temperature.
Surface electronic structure of InSb(001)-c(8 × 2)
I Vobornik;
2013
Abstract
We report an angle-resolved photoemission study of the surface electronic structure of the indium-rich InSb(001)-c(8 × 2) surface, combined with scanning tunneling microscopy and spectroscopy. The reconstructed surface is found to be semiconducting and exhibits no band bending at room temperature. We identify several different surface states, analyze their properties and determine the atomic origin of the most prominent surface state band observed close to the valence band maximum. The electronic band structure is found to exhibit a temperature induced shift, which is quantitatively explained from the change of the chemical potential with temperature, combined with the formation of a surface photovoltage at low temperature.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
