We study the effects of aluminum doping on the electronic and optical properties of ZnO, via density functional simulations. We discuss the bandstructure and absorption properties of Al:ZnO as a function of the dopant concentration, and compare with recent experimental data. Our results support the formation of a transparent conductive oxide compound up to an incorporation of Al of about 3% in substitutional Zn sites. We propose an explanation to the observed degradation of conductivity in terms of interstitial defects expected to occur at high doping concentrations, beyond the Al solubility limit.

Optoelectronic properties of Al:ZnO: critical dosage for an optimal transparent conductive oxide

Arrigo Calzolari;Alessandra Catellani
2011

Abstract

We study the effects of aluminum doping on the electronic and optical properties of ZnO, via density functional simulations. We discuss the bandstructure and absorption properties of Al:ZnO as a function of the dopant concentration, and compare with recent experimental data. Our results support the formation of a transparent conductive oxide compound up to an incorporation of Al of about 3% in substitutional Zn sites. We propose an explanation to the observed degradation of conductivity in terms of interstitial defects expected to occur at high doping concentrations, beyond the Al solubility limit.
2011
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
Istituto Officina dei Materiali - IOM -
Istituto Nanoscienze - NANO
OPTICAL-PROPERTIES
FILMS
ZNO
AL
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/238401
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