We report on a near-field spectroscopic study of single V-shaped InxGa1-xAs/GaAs quantum wires. With subwavelength resolution, the emission from single InxGa1-xAs wires and connecting planar quantum wells - separated by 250 nm - are individually resolved. The contributions of both monolayer height fluctuations on a 100 nm length scale and of short range compositional disorder to the localization of excitons in V-shaped quantum wires are separately identified and their implications for far-field PL spectra discussed. An upper limit for the migration length of the photogenerated excitons within the GaAs barrier layers of 250 nm is determined
Near-field low-temperature photoluminescence spectroscopy of single V-shaped quantum wires
Passaseo;
1999
Abstract
We report on a near-field spectroscopic study of single V-shaped InxGa1-xAs/GaAs quantum wires. With subwavelength resolution, the emission from single InxGa1-xAs wires and connecting planar quantum wells - separated by 250 nm - are individually resolved. The contributions of both monolayer height fluctuations on a 100 nm length scale and of short range compositional disorder to the localization of excitons in V-shaped quantum wires are separately identified and their implications for far-field PL spectra discussed. An upper limit for the migration length of the photogenerated excitons within the GaAs barrier layers of 250 nm is determinedI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
