We present a detailed study of the excitonic nonlinearities in InGaAs/GaAs multiple quantum wells based on both stationary and transient pump-and-probe transmission spectroscopy. Bleaching of the excitonic resonance and free carrier gain have been observed. A quantitative analysis of the observed nonlinearity is provided by means of a rigorous solution of the Bethe-Salpeter equation for the investigated heterostructures.

Nonlinear absorption and gain in InGaAs/GaAs quantum wells

Passaseo;Ra;
1997

Abstract

We present a detailed study of the excitonic nonlinearities in InGaAs/GaAs multiple quantum wells based on both stationary and transient pump-and-probe transmission spectroscopy. Bleaching of the excitonic resonance and free carrier gain have been observed. A quantitative analysis of the observed nonlinearity is provided by means of a rigorous solution of the Bethe-Salpeter equation for the investigated heterostructures.
1997
Istituto di Nanotecnologia - NANOTEC
Istituto Nanoscienze - NANO
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/238620
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