The results of the development of two different technologies for the preparation of special surfaces for ready-to-use ('epi-ready') InP wafers are presented. The epi-ready state was studied by means of X-ray photoelectron spectroscopy. The quality of the substrates stored for 4-12 months was tested by growing an epilayer by metal-organic vapor phase epitaxy and by characterizing it with high-resolution X-ray diffraction and photoluminescence techniques. Evidence that one of our technologies could be adopted industrially is given.
Preparation and test of special surfaces for epi-ready InP wafers
Passaseo;
1997
Abstract
The results of the development of two different technologies for the preparation of special surfaces for ready-to-use ('epi-ready') InP wafers are presented. The epi-ready state was studied by means of X-ray photoelectron spectroscopy. The quality of the substrates stored for 4-12 months was tested by growing an epilayer by metal-organic vapor phase epitaxy and by characterizing it with high-resolution X-ray diffraction and photoluminescence techniques. Evidence that one of our technologies could be adopted industrially is given.File in questo prodotto:
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