A systematic study of the noise performances of polycrystalline silicon thin film transistors is presented. The drain current spectral density of these devices shows an evident 1/ f behavior and scales, when operating in the linear regime, with the square of the mean value of the drain current. The origin of the noise can be ascribed to carrier number fluctuations related to the dynamic trapping and detrapping of the oxide traps
Evidence of carrier number fluctuation as origin of 1/f noise in polycrystalline silicon thin film transistors
Leoni R;Fortunato G;
1995
Abstract
A systematic study of the noise performances of polycrystalline silicon thin film transistors is presented. The drain current spectral density of these devices shows an evident 1/ f behavior and scales, when operating in the linear regime, with the square of the mean value of the drain current. The origin of the noise can be ascribed to carrier number fluctuations related to the dynamic trapping and detrapping of the oxide trapsFile in questo prodotto:
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